APTM60A23FT1G

Obsolete

Microsemi Corporation

MOSFET 2N-CH 600V 20A SP1

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 600V 20A SP1

Technical Specifications

Parameters and characteristics for this part

Specification	APTM60A23FT1G

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	5316 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP1
Power - Max [Max]	208 W
Rds On (Max) @ Id, Vgs	276 mOhm
Supplier Device Package	SP1
Technology	MOSFET (Metal Oxide)

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Microsemi Corporation APTM60A23FT1G	150 °C	-40 °C	MOSFET (Metal Oxide)	208 W	165 nC	SP1	SP1	5316 pF	2 N-Channel (Half Bridge)	Chassis Mount	20 A	276 mOhm	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 600V 20A 208W Chassis Mount SP1

Technical documentation and resources