Zenode.ai Logo
Beta
K
IDH16G65C6XKSA1 - TO-220-2

IDH16G65C6XKSA1

Active
Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 34 A, 21.5 NC, TO-220

Deep-Dive with AI

Search across all available documentation for this part.

IDH16G65C6XKSA1 - TO-220-2

IDH16G65C6XKSA1

Active
Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 34 A, 21.5 NC, TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDH16G65C6XKSA1
Capacitance @ Vr, F783 pF
Current - Average Rectified (Io)34 A
Current - Reverse Leakage @ Vr53 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-220-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackagePG-TO220-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.96
50$ 3.73
100$ 3.42
500$ 2.87
1000$ 2.87
NewarkEach 1$ 5.69
10$ 5.16
25$ 3.43
50$ 3.29
100$ 3.14
250$ 2.88
500$ 2.61

Description

General part information

IDH16G65 Series

TheCoolSiC™ Schottky diode 650V G6is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qcx VF).

Documents

Technical documentation and resources