
IDH16G65C6XKSA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 34 A, 21.5 NC, TO-220
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IDH16G65C6XKSA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 34 A, 21.5 NC, TO-220
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDH16G65C6XKSA1 |
|---|---|
| Capacitance @ Vr, F | 783 pF |
| Current - Average Rectified (Io) | 34 A |
| Current - Reverse Leakage @ Vr | 53 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V |
Pricing
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Description
General part information
IDH16G65 Series
TheCoolSiC™ Schottky diode 650V G6is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qcx VF).
Documents
Technical documentation and resources