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70T3339 - Block Diagram

70T3339S133BCI

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Renesas Electronics Corporation

512K X 18 SYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

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70T3339 - Block Diagram

70T3339S133BCI

Active
Renesas Electronics Corporation

512K X 18 SYNC, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

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Description

General part information

70T3339 Series

The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

Technical Specifications

Parameters and characteristics for this part

Specification70T3339S133BCI
Access Time4.2 ns
Clock Frequency133 MHz
Memory Depth512 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size9 Mbit
Memory TypeVolatile
Memory Width18 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case256-LBGA
Package Length17 mm
Package Name256-CABGA
Package Width17 mm
TechnologySynchronous, SRAM - Dual Port
Voltage - Supply (Maximum)2.6 V
Voltage - Supply (Minimum)2.4 V

Pricing

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