Specification	IR2128

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	12 VDC

IR2128 Series

Part	Fall Time (Typ)	Rise Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Package Name	Input Type	Package Length	Package Width	Channel Type	Driven Configuration	Logic Voltage - VIL	Logic Voltage - VIH	Gate Channel	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Mounting Type
INFINEON IR2128STRPBF	40 ns	80 ns	12 VDC	20 V	500 mA	250 mA	1	8-SOIC	Inverting	0.154 in	3.9 mm	Single	High-Side Low-Side	0.8 V	3 V	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	600 V	Surface Mount
INFINEON IR2128S	40 ns	80 ns	12 VDC	20 V	500 mA	250 mA	1	8-SOIC	Inverting	0.154 in	3.9 mm	Single	High-Side Low-Side	0.8 V	3 V	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	600 V	Surface Mount
INFINEON IR2128SPBF	40 ns	80 ns	12 VDC	20 V	500 mA	250 mA	1	8-SOIC	Inverting	0.154 in	3.9 mm	Single	High-Side Low-Side	0.8 V	3 V	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	600 V	Surface Mount
INFINEON IR2128PBF	40 ns	80 ns	12 VDC	20 V	500 mA	250 mA	1	8-DIP 8-PDIP	Inverting	0.3 in	7.62 mm	Single	High-Side Low-Side	0.8 V	3 V	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	600 V	Through Hole
INFINEON IR2128	40 ns	80 ns	12 VDC	20 V	500 mA	250 mA	1	8-DIP 8-PDIP	Inverting	0.3 in	7.62 mm	Single	High-Side Low-Side	0.8 V	3 V	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	600 V	Through Hole

Pricing

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