Description
General part information
IRF5801 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF5801TRPBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 600 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 3.9 nC |
| Input Capacitance (Ciss) (Max) | 88 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | Micro6™(TSOP-6) |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) | 2.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5.5 V |
Pricing
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CAD
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