Specification	IXFC60N20

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	155 nC
Input Capacitance (Ciss) (Max)	5200 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	ISOPLUS220™
Package Name	ISOPLUS220™
Power Dissipation (Max)	230 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXFC60N20 Series

Part	Gate Charge (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Package Name	Power Dissipation (Max)	Package / Case	Technology	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Vgs(th) (Max)
LITTELFUSE IXFC60N20	155 nC	33 mOhm	5200 pF	10 V	200 V	N-Channel	ISOPLUS220™	230 W	ISOPLUS220™	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	60 A	Through Hole	4 V

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