Specification	IPU60R2K1CEAKMA1

Current - Continuous Drain (Id) (Tc)	3.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6.7 nC
Input Capacitance (Ciss) (Max)	140 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	PG-TO251-3
Power Dissipation (Max)	38 W
Rds On (Max)	2.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPU60R2 Series

Part	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	FET Type
INFINEON IPU60R2K1CEAKMA1	PG-TO251-3	600 V	3.7 A	MOSFET (Metal Oxide)	2.1 Ohm	140 pF	10 V	3.5 V	IPAK TO-251-3 Short Leads TO-251AA	6.7 nC	-40 °C	150 °C	38 W	20 V	Through Hole	N-Channel

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