Description
General part information
BSZ009 Series
Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on)of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ009NE2LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 39 A |
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 124 nC |
| Input Capacitance (Ciss) (Max) | 5500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PG-TSDSON-8-34 |
| Power Dissipation (Max) | 2.1 W, 69 W |
| Rds On (Max) | 900 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 2 V |
Pricing
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