Specification	IPS65R1K5CEAKMA1

Current - Continuous Drain (Id) (Tc)	3.1 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.5 nC
Input Capacitance (Ciss) (Max)	225 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Package Name	TO-251
Power Dissipation (Max)	28 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPS65R Series

Part	Package Name	Vgs(th) (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)
INFINEON IPS65R950C6AKMA1	PG-TO251-3-11	3.5 V	N-Channel	MOSFET (Metal Oxide)	10 V	Through Hole	IPAK TO-251-3 Stub Leads	4.5 A	-55 °C	150 °C	950 mOhm	15.3 nC	328 pF	37 W	20 V	650 V
INFINEON IPS65R1K5CEAKMA1	TO-251	3.5 V	N-Channel	MOSFET (Metal Oxide)	10 V	Through Hole	IPAK TO-251-3 Stub Leads	3.1 A	-40 °C	150 °C	1.5 Ohm	10.5 nC	225 pF	28 W	20 V	650 V
INFINEON IPS65R1K0CEAKMA1	TO-251	3.5 V	N-Channel	MOSFET (Metal Oxide)	10 V	Through Hole	IPAK TO-251-3 Stub Leads	4.3 A	-40 °C	150 °C	1 Ohm	15.3 nC	328 pF	37 W	20 V	650 V

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