Specification	SI7121DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	65 nC, 65 nC
Input Capacitance (Ciss) (Max)	1960 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3 V

SI7121 Series

Part	Rds On (Max)	Package Name	Technology	Mounting Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI7121DN-T1-GE3	18 mOhm	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	3 V	10 V	4.5 V	PowerPAK® 1212-8	30 V	-50 °C	150 °C	1960 pF	65 nC 65 nC	25 V	P-Channel	16 A	3.7 W 52 W
Vishay Dale SI7121ADN-T1-GE3	15 mOhm	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	2.5 V	10 V	4.5 V	PowerPAK® 1212-8	30 V	-50 °C	150 °C	1870 pF	50 nC	25 V	P-Channel		3.5 W 27.8 W	12 A

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