Specification	T2N7002BK,LM

Current - Continuous Drain (Id) (Ta)	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.6 nC
Input Capacitance (Ciss) (Max)	40 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3
Power Dissipation (Max)	320 mW
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

T2N7002 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-23(SOT23)

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	FET Type	Power Dissipation (Max)	Vgs (Max)	Technology	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)
Toshiba Semiconductor and Storage T2N7002BK,LM	40 pF	2.1 V	N-Channel	320 mW	20 V	MOSFET (Metal Oxide)	150 °C	Surface Mount	60 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	400 mA	1.5 Ohm	10 V	4.5 V	0.6 nC
Toshiba Semiconductor and Storage T2N7002AK,LM	17 pF	2.1 V	N-Channel	320 mW	20 V	MOSFET (Metal Oxide)	150 °C	Surface Mount	60 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	200 mA	3.9 Ohm	10 V	4.5 V	0.35 nC

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