Description
General part information
CY14B108 Series
CY14B108N-ZSP25XI is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K words of 16 bits each. The embedded non-volatile elements incorporate Quantum Trap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY14B108N-ZSP25XI |
|---|---|
| Access Time | 25 ns |
| Memory Depth | 512 K |
| Memory Format | NVSRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 1 MB |
| Memory Type | Non-Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 10.16 mm |
| Package Name | 54-TSOP, 54-TSOP II |
| Package Width | 10.16 mm |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.7 V |
| Write Cycle Time - Page | 25 ns |
| Write Cycle Time - Word | 25 ns |
Pricing
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