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CY14B108N-ZSP25XI

CY14B108N-ZSP25XI

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INFINEON

NVSRAM, 8MBIT, 512K X 16BIT, PARALLEL, 2.7 TO 3.6 V, -40°C TO 85°C, TSOP-II-54

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CY14B108N-ZSP25XI

CY14B108N-ZSP25XI

Active
INFINEON

NVSRAM, 8MBIT, 512K X 16BIT, PARALLEL, 2.7 TO 3.6 V, -40°C TO 85°C, TSOP-II-54

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Description

General part information

CY14B108 Series

CY14B108N-ZSP25XI is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K words of 16 bits each. The embedded non-volatile elements incorporate Quantum Trap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Technical Specifications

Parameters and characteristics for this part

SpecificationCY14B108N-ZSP25XI
Access Time25 ns
Memory Depth512 K
Memory FormatNVSRAM
Memory Interface (Type)Parallel
Memory Size1 MB
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name54-TSOP, 54-TSOP II
Package Width10.16 mm
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page25 ns
Write Cycle Time - Word25 ns

Pricing

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