PMZ290UNE2YL

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Nexperia USA Inc.

MOSFET N-CH 20V 1.2A DFN1006-3

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PMZ290UNE2YL

Active

Nexperia USA Inc.

MOSFET N-CH 20V 1.2A DFN1006-3

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMZ290 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ290UNE2YL

Current - Continuous Drain (Id) (Ta)	1.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	1.4 nC
Input Capacitance (Ciss) (Max)	46 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-101, SOT-883
Package Name	SOT-883
Power Dissipation (Max)	350 mW, 5.43 W
Rds On (Max)	320 mOhm, 320 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMZ290 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs(th) (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Power Dissipation (Max)
Nexperia USA Inc. PMZ290UNE2YL	4.5 V	1.5 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	46 pF	SOT-883	8 V	1.2 A	1.4 nC	950 mV	SC-101 SOT-883	N-Channel	20 V	320 mOhm 320 mOhm	5.43 W 350 mW