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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK6A60W,S4VX

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.75 Ω@10V, TO-220SIS, DTMOSⅣ

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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK6A60W,S4VX

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.75 Ω@10V, TO-220SIS, DTMOSⅣ

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Description

General part information

TK6A60W Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.75 Ω@10V, TO-220SIS, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK6A60W,S4VX
Current - Continuous Drain (Id) (Ta)6.2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)390 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)30 W
Rds On (Max)750 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)3.7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Self-Turn-On Phenomenon
Derating of the MOSFET Safe Operating Area
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Structures and Characteristics: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Motor Control (Vacuum Cleaners)
Avalanche energy calculation
Maximum Ratings: Power MOSFET Application Notes
Simplified CFD Model Application Note
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET SPICE model grade
TK6A60W Data sheet/English
Hints and Tips for Thermal Design part3
Resonant Circuits and Soft Switching
Electrical Characteristics: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
TK6A60W Data sheet/Japanese
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Secondary Breakdown