GBL02 D2G

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 4A GBL

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 4A GBL

Technical Specifications

Parameters and characteristics for this part

Specification	GBL02 D2G

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBL, 4-SIP
Supplier Device Package	GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Diode Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Voltage - Peak Reverse (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package
Taiwan Semiconductor Corporation GBL02 D2G	5 µA	Single Phase	1.1 V	-55 °C	150 °C	4-SIP GBL	Standard	200 V	Through Hole	4 A	GBL

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole GBL

Technical documentation and resources