Specification	IXDN430MYI

Channel Type	Single
Current - Peak Output (Sink)	30 A
Current - Peak Output (Source)	30 A
Driven Configuration	Low-Side
Fall Time (Typ)	16 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	3.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	5 Leads
Package Name	TO-263-5, D2PAK
Rise Time (Typ)	18 ns
Voltage - Supply (Maximum)	35 V
Voltage - Supply (Minimum)	8.5 V

IXDN430 Series

Part	Gate Type	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Input Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Mounting Type	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Driven Configuration	Package Name	Gate Channel	Package Leads	Package / Case
LITTELFUSE IXDN430MYI	IGBT MOSFET N-Channel P-Channel MOSFET	16 ns	18 ns	3.5 V	0.8 V	1	Non-Inverting	35 V	8.5 V	30 A	30 A	Surface Mount	Single	-55 °C	150 °C	Low-Side	D2PAK TO-263-5	N-Channel P-Channel	5 Leads
LITTELFUSE IXDN430CI	IGBT MOSFET N-Channel P-Channel MOSFET	16 ns	18 ns	3.5 V	0.8 V	1	Non-Inverting	35 V	8.5 V	30 A	30 A	Through Hole	Single	-55 °C	150 °C	Low-Side	TO-220-5	N-Channel P-Channel		TO-220-5
LITTELFUSE IXDN430YI	IGBT MOSFET N-Channel P-Channel MOSFET	16 ns	18 ns	3.5 V	0.8 V	1	Non-Inverting	35 V	8.5 V	30 A	30 A	Surface Mount	Single	-55 °C	150 °C	Low-Side	D2PAK TO-263-5	N-Channel P-Channel	5 Leads
LITTELFUSE IXDN430MCI	IGBT MOSFET N-Channel P-Channel MOSFET	16 ns	18 ns	3.5 V	0.8 V	1	Non-Inverting	35 V	8.5 V	30 A	30 A	Through Hole	Single	-55 °C	150 °C	Low-Side	TO-220-5	N-Channel P-Channel		TO-220-5

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