Specification	IRF9Z30PBF

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	900 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	74 W
Rds On (Max)	140 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9Z30 Series

Part	Vgs (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name	Technology	Drain to Source Voltage (Vdss)	FET Type
Vishay Dale IRF9Z30PBF	20 V	140 mOhm	10 V	Through Hole	74 W	18 A	-55 °C	150 °C	4 V	TO-220-3	39 nC	900 pF	TO-220AB	MOSFET (Metal Oxide)	50 V	P-Channel
Vishay Dale IRF9Z30PBF-BE3	20 V	140 mOhm	10 V	Through Hole	74 W	18 A	-55 °C	150 °C	4 V	TO-220-3	39 nC	900 pF	TO-220AB	MOSFET (Metal Oxide)	50 V	P-Channel

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