Description
General part information
IRFH5210 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFH5210TRPBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Current - Continuous Drain (Id) (Tc) | 55 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 59 nC |
| Input Capacitance (Ciss) (Max) | 2570 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-PQFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 3.6 W, 104 W |
| Rds On (Max) | 14.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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