IXFH16N90Q

Obsolete

IXYS

MOSFET N-CH 900V 16A TO247AD

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Obsolete

IXYS

MOSFET N-CH 900V 16A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH16N90Q

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	360 W
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package
IXYS IXFH16N90Q	10 V	5 V	16 A	360 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4000 pF	900 V	N-Channel	170 nC	Through Hole	TO-247-3	TO-247AD (IXFH)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 16A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources