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IPD50R800CEATMA1

IPD50R800CEATMA1

Obsolete
INFINEON

MOSFET N CH 500V 5A TO252

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IPD50R800CEATMA1

IPD50R800CEATMA1

Obsolete
INFINEON

MOSFET N CH 500V 5A TO252

Find alt

Description

General part information

IPD50R Series

N-Channel 500 V 5A (Tc) 60W (Tc) Surface Mount PG-TO252-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD50R800CEATMA1
Current - Continuous Drain (Id) (Tc)5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)13 V
FET TypeN-Channel
Gate Charge (Max)12.4 nC
Input Capacitance (Ciss) (Max)280 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)60 W
Rds On (Max)800 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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