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IPD50R950CEBTMA1

IPD50R950CEBTMA1

Unknown
INFINEON

MOSFET N-CH 500V 4.3A TO252-3

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IPD50R950CEBTMA1

IPD50R950CEBTMA1

Unknown
INFINEON

MOSFET N-CH 500V 4.3A TO252-3

Find alt

Description

General part information

IPD50R Series

N-Channel 500 V 4.3A (Tc) 34W (Tc) Surface Mount PG-TO252-3-11

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD50R950CEBTMA1
Current - Continuous Drain (Id) (Tc)4.3 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)13 V
FET TypeN-Channel
Gate Charge (Max)10.5 nC
Input Capacitance (Ciss) (Max)231 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-11
Power Dissipation (Max)34 W
Rds On (Max)950 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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