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Infineon Technologies AG-IRLHM620TRPBF MOSFETs Trans MOSFET N-CH 20V 26A 8-Pin TSDSON EP T/R

IRLHM620TRPBF

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INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 2.2 MOHM;

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Infineon Technologies AG-IRLHM620TRPBF MOSFETs Trans MOSFET N-CH 20V 26A 8-Pin TSDSON EP T/R

IRLHM620TRPBF

Active
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 2.2 MOHM;

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Description

General part information

IRLHM620 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLHM620TRPBF
Current - Continuous Drain (Id) (Ta)26 A
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)78 nC
Input Capacitance (Ciss) (Max)3620 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length3 mm
Package NamePQFN
Package Width3 mm
Power Dissipation (Max)37 W, 2.7 W
Rds On (Max)2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.1 V

Pricing

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CAD

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