IPB038N12N3GATMA1

NRND

INFINEON

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB038N12N3GATMA1

NRND

INFINEON

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

OptiMOS 3 Series

The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB038N12N3GATMA1

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	211 nC
Input Capacitance (Ciss) (Max)	13800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	300 W
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

OptiMOS 3 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Mounting Type	Gate Charge (Max)	Technology	Vgs(th) (Max)	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPB038N12N3GATMA1	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 mOhm	120 A	-55 °C	175 °C	PG-TO263-3	Surface Mount	211 nC	MOSFET (Metal Oxide)	4 V	20 V	N-Channel	120 V	13800 pF	300 W
INFINEON BSZ42DN25NS3GATMA1	10 V	8-PowerTDFN	425 mOhm	5 A	-55 °C	150 °C	PG-TSDSON-8-2	Surface Mount	5.5 nC	MOSFET (Metal Oxide)	4 V	20 V	N-Channel	250 V	430 pF	33.8 W
INFINEON IPD600N25N3GATMA1	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 mOhm	25 A 25 A	-55 °C	175 °C	PG-TO252-3	Surface Mount	29 nC	MOSFET (Metal Oxide)	4 V	20 V	N-Channel	250 V		136 W
INFINEON BSC093N04LSGATMA1		8-PowerTDFN	9.3 mOhm	49 A	-55 °C	150 °C	PG-TDSON-8-5	Surface Mount	24 nC 24 nC	MOSFET (Metal Oxide)	2 V	20 V	N-Channel	40 V	1900 pF	2.5 W 35 W	13 A	10 V	4.5 V
INFINEON IPP057N08N3GXKSA1		TO-220-3	5.7 mOhm	80 A	-55 °C	175 °C	PG-TO220-3	Through Hole	69 nC	MOSFET (Metal Oxide)	3.5 V	20 V	N-Channel	80 V	4750 pF	150 W		10 V	6 V
INFINEON IPD068N10N3GATMA1		DPAK (2 Leads + Tab) SC-63 TO-252-3	6.8 mOhm	90 A	-55 °C	175 °C	PG-TO252-3	Surface Mount	68 nC	MOSFET (Metal Oxide)	3.5 V	20 V	N-Channel	100 V	4910 pF	150 W		10 V	6 V
INFINEON IPP032N06N3GXKSA1	10 V	TO-220-3	3.2 mOhm	120 A	-55 °C	175 °C	PG-TO220-3	Through Hole	165 nC	MOSFET (Metal Oxide)	4 V	20 V	N-Channel	60 V	13000 pF	188 W
INFINEON BSC060N10NS3GATMA1		8-PowerTDFN	6 mOhm		-55 °C	150 °C	PG-TDSON-8-1	Surface Mount	68 nC	MOSFET (Metal Oxide)	3.5 V	20 V	N-Channel	100 V	4900 pF	125 W	14.9 A 14.9 A	10 V	6 V
INFINEON BSC160N10NS3GATMA1		8-PowerTDFN	16 mOhm		-55 °C	150 °C	PG-TDSON-8-1	Surface Mount	25 nC	MOSFET (Metal Oxide)	3.5 V	20 V	N-Channel	100 V	1700 pF	60 W	8.8 A	10 V	6 V
INFINEON BSZ340N08NS3GATMA1		8-PowerTDFN	34 mOhm	23 A	-55 °C	150 °C	PG-TSDSON-8	Surface Mount	9.1 nC	MOSFET (Metal Oxide)	3.5 V	20 V	N-Channel	80 V	630 pF	2.1 W 32 W	6 A	10 V	6 V