CTS05S30,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/0.5 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)
CTS05S30,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/0.5 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)
Description
General part information
CTS05S30 Series
DIODES, 20 V/0.5 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)
Technical Specifications
Parameters and characteristics for this part
| Specification | CTS05S30,L3F |
|---|---|
| Capacitance | 55 pF |
| Current - Average Rectified (Io) | 500 mA |
| Current - Reverse Leakage | 150 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | SOD-882 |
| Package Name | CST2 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) | 340 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Selecting a Schottky Barrier Diode for Voltage Boost Circuits
CTS05S30 Data sheet/Japanese
Basics of Diodes (Types and Overview of Diodes)
Mini catalog Introduction of Toshiba diode lineup for Industries
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
CTS05S30 Data sheet/English
Selection Guide Small Signal 2025 Rev1.0
Mini catalog Toshiba's circuit protection solutions and switch solutions
Basics of Diodes (Power Losses and Thermal Design)
Parasitic Oscillation and Ringing of Power MOSFETs