Specification	WG50N65DHJQ

Current - Collector (Ic) (Max)	91 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	160 nC
IGBT Type	Trench Field Stop
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power - Max	278 W
Reverse Recovery Time (trr)	105 ns
Switching Energy (Off)	600 µJ
Switching Energy (On)	1.7 mJ
Td (off) @ 25°C	163 ns
Td (on) @ 25°C	66 ns
Test Condition Current	50 A
Test Condition Resistance	10 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

WG50N65D Series

Part	Package Name	Reverse Recovery Time (trr)	Mounting Type	Td (on) @ 25°C	Td (off) @ 25°C	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Test Condition Voltage (Secondary)	Vce(on) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Pulsed (Icm)	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Switching Energy (Off)	Switching Energy (On)	Gate Charge	Input Type	Current - Collector (Ic) (Max)	Power - Max	IGBT Type
WeEn Semiconductors WG50N65DHJQ	TO-247-3	105 ns	Through Hole	66 ns	163 ns	400 V	10 Ohm	50 A	15 V	2 V	-55 °C	150 °C	200 A	TO-247-3	650 V	600 µJ	1.7 mJ	160 nC	Standard	91 A	278 W	Trench Field Stop
WeEn Semiconductors WG50N65DHWQ	TO-247-3	105 ns	Through Hole	66 ns	163 ns	400 V	10 Ohm	50 A	15 V	2 V	-55 °C	150 °C	200 A	TO-247-3	650 V	600 µJ	1.7 mJ	160 nC	Standard	91 A	278 W	Trench Field Stop

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