STTH302

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STMicroelectronics

200 V, 3 A DO-201AD ULTRAFAST DIODE

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STMicroelectronics

200 V, 3 A DO-201AD ULTRAFAST DIODE

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Technical Specifications

Parameters and characteristics for this part

Specification	STTH302

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

200 V, 3 A DO-201AD Ultrafast Diode

Part	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTH302S	175 °C	3 A	200 mA 500 ns	Surface Mount	3 µA	950 mV	DO-214AB SMC	35 ns	Standard	SMC	200 V
STMicroelectronics STTH302	175 °C	3 A	200 mA 500 ns	Through Hole	3 µA	950 mV	DO-201AD Axial	35 ns	Standard	DO-201AD	200 V
STMicroelectronics STTH302RL	175 °C	3 A	200 mA 500 ns	Through Hole	3 µA	950 mV	DO-201AD Axial	35 ns	Standard	DO-201AD	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The STTH302S, which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.

The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.

Technical documentation and resources