Description
General part information
IPC302N Series
With OptiMOS™ 200V and 250V Infineon continues to deliver best-in-class on-state resistance (RDS(on)) power MOSFETs with unique performance. The leading RDS(on)and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet (PoE).
Technical Specifications
Parameters and characteristics for this part
| Specification | IPC302N20N3X1SA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 1 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Package Name | Sawn on foil |
| Rds On (Max) | 100 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources