BSC076N04NDATMA1

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.6 MOHM;

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	BSC076N04NDATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	2.3 W, 65 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSC076N04NDATMA1	4 V	2 N-Channel (Dual)	40 V	-55 °C	175 ░C	8-PowerVDFN	20 A	7.6 mOhm	Surface Mount	MOSFET (Metal Oxide)	PG-TDSON-8-4	38 nC	2.3 W 65 W	2950 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 20A (Tc) 2.3W (Ta), 65W (Tc) Surface Mount PG-TDSON-8-4

Technical documentation and resources