Specification	IR2127STRPBF

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	12 VDC

IR2127 Series

Part	Mounting Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Name	Input Type	High Side Voltage - Max (Bootstrap)	Channel Type	Package Length	Package Width	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Fall Time (Typ)	Rise Time (Typ)	Gate Channel	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Logic Voltage - VIL	Logic Voltage - VIH	Driven Configuration
INFINEON 98-0066	Surface Mount	12 VDC	20 V	8-SOIC	Non-Inverting	600 V	Single	0.154 in	3.9 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side
INFINEON IR2127STRPBF	Surface Mount	12 VDC	20 V	8-SOIC	Non-Inverting	600 V	Single	0.154 in	3.9 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side
INFINEON IR2127	Through Hole	12 VDC	20 V	8-DIP 8-PDIP	Non-Inverting	600 V	Single	0.3 in	7.62 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side
INFINEON IR2127PBF	Through Hole	12 VDC	20 V	8-DIP 8-PDIP	Non-Inverting	600 V	Single	0.3 in	7.62 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side
INFINEON IR2127STR	Surface Mount	12 VDC	20 V	8-SOIC	Non-Inverting	600 V	Single	0.154 in	3.9 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side
INFINEON IR2127SPBF	Surface Mount	12 VDC	20 V	8-SOIC	Non-Inverting	600 V	Single	0.154 in	3.9 mm	1	500 mA	250 mA	40 ns	80 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	0.8 V	3 V	High-Side Low-Side

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IR2127

Application Note AN-978 HV Floating MOS-Gate Driver ICs

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

IR2127STRPBF | Datasheet