Specification	SI8406DB-T2-E1

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	830 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFBGA
Package Length	1.5 mm
Package Name	6-Micro Foot™
Package Width	1 mm
Power Dissipation (Max)	2.77 W, 13 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	850 mV

SI8406 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Package Name	Package Length	Package Width	FET Type	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI8406DB-T2-E1	4.5 V	1.8 V	850 mV	16 A	MOSFET (Metal Oxide)	830 pF	8 V	33 mOhm	20 V	6-UFBGA	2.77 W 13 W	6-Micro Foot™	1.5 mm	1 mm	N-Channel	20 nC	Surface Mount	-55 °C	150 °C

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