Specification	SI4569DY-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	7.9 A
Current - Continuous Drain (Id) (Typical)	7.6 A
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max)	855 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	3.1 W
Power - Max (Value 2)	3.2 W
Rds On (Max)	27 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

SI4569 Series

Part	Technology	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Configuration	Package Name	Mounting Type	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Rds On (Max)	Power - Max (Value 1)	Power - Max (Value 2)	Drain to Source Voltage (Vdss)	Package Length	Package Width	Input Capacitance (Ciss) (Max)
Vishay Dale SI4569DY-T1-E3	MOSFET (Metal Oxide)	2 V	-55 °C	150 °C	N P-Channel	8-SOIC	Surface Mount	7.9 A	7.6 A	27 mOhm	3.1 W	3.2 W	40 V	0.154 in	3.9 mm	855 pF
Vishay Dale SI4569DY-T1-GE3	MOSFET (Metal Oxide)	2 V	-55 °C	150 °C	N P-Channel	8-SOIC	Surface Mount	7.9 A	7.6 A	27 mOhm	3.1 W	3.2 W	40 V	0.154 in	3.9 mm	855 pF

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