Specification	IRFBF20S

Current - Continuous Drain (Id) (Tc)	1.7 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	490 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	54 W, 3.1 W
Rds On (Max)	8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFBF20 Series

Part	Power Dissipation (Max)	Rds On (Max)	Vgs(th) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	FET Type
Vishay Dale IRFBF20SPBF	3.1 W 54 W	8 Ohm	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Surface Mount	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	TO-263 (D2PAK)	1.7 A	N-Channel
Vishay Dale IRFBF20PBF	54 W	8 Ohm	4 V	TO-220-3	10 V	Through Hole	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	TO-220AB	1.7 A	N-Channel
Vishay Dale IRFBF20LPBF	3.1 W 54 W	8 Ohm	4 V	I2PAK TO-262-3 Long Leads TO-262AA	10 V	Through Hole	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	I2PAK	1.7 A	N-Channel
Vishay Dale IRFBF20S	3.1 W 54 W	8 Ohm	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Surface Mount	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	TO-263 (D2PAK)	1.7 A	N-Channel
Vishay Dale IRFBF20STRRPBF	3.1 W 54 W	8 Ohm	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Surface Mount	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	TO-263 (D2PAK)	1.7 A	N-Channel
Vishay Dale IRFBF20STRLPBF	3.1 W 54 W	8 Ohm	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Surface Mount	900 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	38 nC	490 pF	TO-263 (D2PAK)	1.7 A	N-Channel

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