STU75N3LLH6-S

Obsolete

STMicroelectronics

MOSFET N-CH 30V 75A IPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 30V 75A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU75N3LLH6-S

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1690 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	5.9 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STU75N3LLH6	60 W	2.5 V	N-Channel	4.5 V 10 V	IPAK TO-251-3 Short Leads TO-251AA	30 V	20 V	23.8 nC	MOSFET (Metal Oxide)	Through Hole	TO-251 (IPAK)	75 A	2030 pF	5.9 mOhm	-55 °C	175 ░C
STMicroelectronics STU75N3LLH6-S	60 W	2.5 V	N-Channel	4.5 V 10 V	IPAK TO-251-3 Short Leads TO-251AA	30 V	20 V		MOSFET (Metal Oxide)	Through Hole	TO-251 (IPAK)	75 A	1690 pF	5.9 mOhm	-55 °C	175 ░C	17 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources