STB50NE10T4

Obsolete

STMicroelectronics

MOSFET N-CH 100V 50A D2PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 100V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB50NE10T4

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	166 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology
STMicroelectronics STB50NE10T4	100 V	166 nC	Surface Mount	10 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	175 ░C	-65 °C	27 mOhm	20 V	6000 pF	180 W	50 A	4 V	MOSFET (Metal Oxide)
STMicroelectronics STB50NF25	250 V	68.2 nC	Surface Mount	10 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	150 °C	-55 °C	69 mOhm	20 V	2670 pF		45 A	4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 50A (Tc) 180W (Tc) Surface Mount D2PAK

Technical documentation and resources