IXFH14N100Q

Obsolete

LITTELFUSE

MOSFET N-CH 1000V 14A TO247AD

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IXFH14N100Q

Obsolete

LITTELFUSE

MOSFET N-CH 1000V 14A TO247AD

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFH14 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH14N100Q

Current - Continuous Drain (Id) (Tc)	14 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	4500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AD (IXFH)
Power Dissipation (Max)	360 W
Rds On (Max)	750 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

IXFH14 Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	FET Type	Rds On (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Package / Case	Gate Charge (Max)
LITTELFUSE IXFH14N85X	1043 pF	10 V	460 W	850 V	Through Hole	TO-247 (IXTH)	N-Channel	550 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	30 nC
LITTELFUSE IXFH14N100Q	4500 pF	10 V	360 W	1000 V	Through Hole	TO-247AD (IXFH)	N-Channel	750 mOhm	20 V	-55 °C	150 °C	5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	170 nC
LITTELFUSE IXFH14N60P	2500 pF	10 V	300 W	600 V	Through Hole	TO-247AD (IXFH)	N-Channel	550 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	36 nC 36 nC
LITTELFUSE IXFH14N85X	1043 pF	10 V	460 W	850 V	Through Hole	TO-247 (IXTH)	N-Channel	550 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	30 nC
LITTELFUSE IXFH14N80P	3900 pF	10 V	400 W	800 V	Through Hole	TO-247AD (IXFH)	N-Channel	720 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	61 nC
LITTELFUSE IXFH14N80	4870 pF	10 V	300 W	800 V	Through Hole	TO-247AD (IXFH)	N-Channel	700 mOhm	20 V	-55 °C	150 °C	4.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	200 nC
LITTELFUSE IXFH14N60P	2500 pF	10 V	300 W	600 V	Through Hole	TO-247AD (IXFH)	N-Channel	550 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	36 nC 36 nC
LITTELFUSE IXFH14N100	4500 pF	10 V	360 W	1000 V	Through Hole	TO-247AD (IXFH)	N-Channel	750 mOhm	20 V	-55 °C	150 °C	4.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	220 nC
LITTELFUSE IXFH14N100Q2	2800 pF	10 V	500 W	1000 V	Through Hole	TO-247AD (IXFH)	N-Channel	950 mOhm 950 mOhm	30 V	-55 °C	150 °C	5.5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	83 nC
LITTELFUSE IXFH14N60P3	1480 pF	10 V	327 W	600 V	Through Hole	TO-247AD (IXFH)	N-Channel	540 mOhm	30 V	-55 °C	150 °C	5 V	14 A	MOSFET (Metal Oxide)	TO-247-3	25 nC

Pricing

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