IXFT70N30Q3

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IXYS

MOSFET N-CH 300V 70A TO268

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IXYS

MOSFET N-CH 300V 70A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT70N30Q3

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXFT70N30Q3	98 nC	N-Channel	20 V	TO-268AA	MOSFET (Metal Oxide)	830 W	70 A	300 V	6.5 V	Surface Mount	10 V	-55 °C	150 °C	54 mOhm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
IXYS IXFT70N15	180 nC	N-Channel	20 V	TO-268AA	MOSFET (Metal Oxide)	300 W	70 A	150 V		Surface Mount	10 V	-55 °C	150 °C	28 mOhm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	4 V	3600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 300 V 70A (Tc) 830W (Tc) Surface Mount TO-268AA

Technical documentation and resources

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