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Description

General part information

HMC8412 Series

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.ApplicationsTest instrumentationTelecommunicationsMilitary radar and communicationElectronic warfareAerospace

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC8412CHIPS-SX
Current - Supply60 mA
Frequency (Max)10 GHz
Frequency (Min)400 MHz
Gain14.5 dB
Mounting TypeSurface Mount
Noise Figure1.7 dB
P1dB19 dBm
Package / CaseDie
Package NameDie
RF TypeRadar
Test Frequency (Maximum)8 GHz
Test Frequency (Minimum)400 MHz
Voltage - Supply (Maximum)6 V
Voltage - Supply (Minimum)3 V

Pricing

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CAD

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