Description
General part information
IPN50R950 Series
Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPN50R950CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 6.6 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10.5 nC |
| Input Capacitance (Ciss) (Max) | 231 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) | 950 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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Documents
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