Description
General part information
2EDL8024 Series
The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such astelecomanddatacomDC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of theEiceDRIVER™ 2EDL8 familycome in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2EDL8024GXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 4 A |
| Current - Peak Output (Source) | 4 A |
| Driven Configuration | High-Side, Low-Side |
| Fall Time (Typ) | 45 ns |
| Gate Channel | N-Channel |
| Gate Type | MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 90 V |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Package Name | PG-VDSON-8-4 |
| Rise Time (Typ) | 45 ns |
| Voltage - Supply (Maximum) | 17 V |
| Voltage - Supply (Minimum) | 8 V |
Pricing
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