TK560A60Y,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
TK560A60Y,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
Description
General part information
TK560A60Y Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK560A60Y,S4X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14.5 nC |
| Input Capacitance (Ciss) (Max) | 380 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 30 W |
| Rds On (Max) | 560 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
MOSFET Self-Turn-On Phenomenon
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Selection Guide MOSFETs 2025 Rev1.0
TK560A60Y Data sheet/Japanese
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Structures and Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
Calculating the Temperature of Discrete Semiconductor Devices
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Hints and Tips for Thermal Design part3
Resonant Circuits and Soft Switching
MOSFET Secondary Breakdown
Avalanche energy calculation
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
TK560A60Y Data sheet/English
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter