TP2640LG-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -400V, 15 OHM 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
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TP2640LG-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -400V, 15 OHM 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP2640LG-G | TP2640 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 86 mA | 86 mA |
| Drain to Source Voltage (Vdss) | 400 V | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V | 10 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF | 300 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-SOIC | 8-SOIC |
| Package / Case [x] | 0.154 in | 0.154 in |
| Package / Case [y] | 3.9 mm | 3.9 mm |
| Power Dissipation (Max) | 740 mW | 740 mW |
| Rds On (Max) @ Id, Vgs | 15 Ohm | 15 Ohm |
| Supplier Device Package | 8-SOIC | 8-SOIC |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.49 | |
| 25 | $ 2.07 | |||
| 100 | $ 1.89 | |||
| Digi-Reel® | 1 | $ 2.49 | ||
| 25 | $ 2.07 | |||
| 100 | $ 1.89 | |||
| Tape & Reel (TR) | 3300 | $ 1.89 | ||
| Microchip Direct | T/R | 1 | $ 2.49 | |
| 25 | $ 2.07 | |||
| 100 | $ 1.89 | |||
| 1000 | $ 1.57 | |||
| 5000 | $ 1.45 | |||
| 10000 | $ 1.35 | |||
| Newark | Each (Supplied on Full Reel) | 100 | $ 1.95 | |
TP2640 Series
MOSFET, P-Channel Enhancement-Mode, -400V, 15 Ohm
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP2640LG-G | 2 V | -55 °C | 150 °C | 86 mA | 400 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 8-SOIC | Surface Mount | 15 Ohm | P-Channel | 10 V | 2.5 V | 20 V | 740 mW | 300 pF |
Microchip Technology TP2640LG-G | ||||||||||||||||||
Microchip Technology TP2640LG-G |
Description
General part information
TP2640 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources