IPP26CNE8N G

Obsolete

Infineon Technologies

MOSFET N-CH 85V 35A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 85V 35A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP26CNE8N G

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	2070 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Vgs (Max)	Supplier Device Package
Infineon Technologies IPP26CNE8N G	10 V	71 W	35 A	MOSFET (Metal Oxide)	85 V	4 V	2070 pF	-55 °C	175 ░C	Through Hole	26 mOhm	31 nC	N-Channel	TO-220-3	20 V	PG-TO220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 35A (Tc) 71W (Tc) Through Hole PG-TO220-3

Technical documentation and resources