PSMN1R0-40YSHX

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Nexperia USA Inc.

N-CHANNEL 40 V, 1 MΩ, 290 A STANDARD LEVEL MOSFET IN LFPAK56E USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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PSMN1R0-40YSHX

Active

Nexperia USA Inc.

N-CHANNEL 40 V, 1 MΩ, 290 A STANDARD LEVEL MOSFET IN LFPAK56E USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R0-40YSH Series

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R0-40YSHX

Current - Continuous Drain (Id) (Tc)	290 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	122 nC, 122 nC
Input Capacitance (Ciss) (Max)	9433 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-LFPAK, SOT-1023
Package Name	Power-SO8, LFPAK56
Power Dissipation (Max)	333 W
Rds On (Max)	1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.6 V

PSMN1R0-40YSH Series

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs(th) (Max)	Gate Charge (Max)	FET Feature	Rds On (Max)	Vgs (Max)
Nexperia USA Inc. PSMN1R0-40YSHX	9433 pF	333 W	40 V	-55 °C	175 °C	Surface Mount	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	4-LFPAK SOT-1023	10 V	290 A	N-Channel	3.6 V	122 nC 122 nC	Schottky Diode (Body)	1 mOhm	20 V