STTH8L02DDJFY-TR

Obsolete

STMicroelectronics

DIODE ARRAY GP 200V 4A PWRFLAT

Search across all available documentation for this part.

Obsolete

STMicroelectronics

DIODE ARRAY GP 200V 4A PWRFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STTH8L02DDJFY-TR

Current - Average Rectified (Io) (per Diode)	4 A
Current - Reverse Leakage @ Vr	3 µA
Diode Configuration	2 Independent
Grade	Automotive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerVDFN
Qualification	AEC-Q101
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	PowerFlat™ (5x6) Dual
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Technology	Supplier Device Package	Package / Case	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Speed	Grade	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
STMicroelectronics STTH8L02DDJFY-TR	Standard	PowerFlat™ (5x6) Dual	8-PowerVDFN	2 Independent	4 A	1.1 V	40 ns	Surface Mount Wettable Flank	200 V	AEC-Q101	200 mA 500 ns	Automotive	3 µA	-40 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 200 V 4A Surface Mount, Wettable Flank 8-PowerVDFN

Technical documentation and resources