JAN2N2920U

Active

Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

JAN2N2920U

Active

Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

Description Specifications Series Pricing CAD Documents

Description

General part information

2N2920 Series

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G" and "H") are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N2920U

Current - Collector (Ic) (Max)	0.03 mA
Current - Collector Cutoff (Max)	10 µA
DC Current Gain (hFE) (Min)	300
Grade	Military
Mounting Type	Surface Mount
NPN Count	2
Operating Temperature	200 °C
Package / Case	No Lead, 6-SMD
Package Name	U
Power - Max	350 mW
Qualification	MIL-PRF-19500, 355
Transistor Configuration	Dual
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2N2920 Series

NPN Silicon Dual 60V, 0.03A

Part	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	NPN Count	Transistor Type	Transistor Configuration	Package Name	Grade	Package / Case	Mounting Type	DC Current Gain (hFE) (Min)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vce Saturation (Max)	Power - Max	Qualification	Operating Temperature
Microchip Technology JANTX2N2920A	10 µA	0.03 mA	2	NPN	Dual	TO-78-6	Military	TO-78-6 Metal Can	Through Hole	300	60 V	-65 °C	200 °C	300 mV	350 mW	355 MIL-PRF-19500
Microchip Technology JANSR2N2920U	10 µA	0.03 mA	2	NPN	Dual	6-SMD	Military	6-SMD No Lead	Surface Mount	300	60 V	-65 °C	200 °C	300 mV	350 mW	355 MIL-PRF-19500
Microchip Technology JANTXV2N2920		0.03 mA	2	NPN	Dual	TO-78-6	Military	TO-78-6 Metal Can	Through Hole		60 V					355 MIL-PRF-19500	200 °C
Microchip Technology 2N2920U	10 µA	0.03 mA	2	NPN	Dual	6-SMD		6-SMD No Lead	Surface Mount	300	60 V	-65 °C	200 °C	300 mV	350 mW
Microchip Technology JANS2N2920U	10 µA	0.03 mA	2	NPN	Dual	6-SMD	Military	6-SMD No Lead	Surface Mount	300	60 V	-65 °C	200 °C	300 mV	350 mW	355 MIL-PRF-19500
Microchip Technology 2N2920U/TR	10 µA	0.03 mA	2	NPN	Dual	6-SMD		6-SMD No Lead	Surface Mount	300	60 V	-65 °C	200 °C	300 mV	350 mW
Microchip Technology JAN2N2920U	10 µA	0.03 mA	2	NPN	Dual	U	Military	6-SMD No Lead	Surface Mount	300	60 V			300 mV	350 mW	355 MIL-PRF-19500	200 °C
Microchip Technology JANSF2N2920	10 µA	0.03 mA	2	NPN	Dual	TO-78-6	Military	TO-78-6 Metal Can	Through Hole	300	60 V	-65 °C	200 °C	300 mV	350 mW	MIL-PRF-19500
Microchip Technology JANSR2N2920	10 µA	0.03 mA	2	NPN	Dual	TO-78-6	Military	TO-78-6 Metal Can	Through Hole	300	60 V	-65 °C	200 °C	300 mV	350 mW	MIL-PRF-19500
Microchip Technology JANTXV2N2920L	10 µA	0.03 mA	2	NPN	Dual	TO-78-6	Military	TO-78-6 Metal Can	Through Hole	300	60 V			300 mV	350 mW	355 MIL-PRF-19500	200 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N2919_2N2920_L_U Radiation Hardened NPN Silicon Dual Transistor

Product Change Notice EN

JAN2N2920U | Datasheet