RBEF02253R000KFB00

Active

Vishay General Semiconductor - Diodes Division

RES CHAS MNT 3 OHM 10% 225W

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

RES CHAS MNT 3 OHM 10% 225W

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case	Composition	Operating Temperature [Max]	Operating Temperature [Min]	Size / Dimension [diameter]	Size / Dimension [diameter]	Size / Dimension [x]	Size / Dimension [x]	Tolerance	Resistance	Power (Watts)	Mounting Feature	Coating, Housing Type	Features	Lead Style
Vishay General Semiconductor - Diodes Division RBEF02253R000KFB00	Radial Tubular	Wirewound	415 °C	-55 °C	28.58 mm	1.125 "	155.58 mm	6.125 in	10 %	3 Ohms	225 W	Brackets (not included)	Vitreous Enamel Coated	Pulse Withstanding	Solder Lugs
Vishay General Semiconductor - Diodes Division RBEF022533R00KFB00	Radial Tubular	Wirewound	415 °C	-55 °C	28.58 mm	1.125 "	155.58 mm	6.125 in	10 %	33 Ohms	225 W	Brackets (not included)	Vitreous Enamel Coated	Pulse Withstanding	Solder Lugs
Vishay General Semiconductor - Diodes Division RBEF022512R00KFB00	Radial Tubular	Wirewound	415 °C	-55 °C	28.58 mm	1.125 "	155.58 mm	6.125 in	10 %	12 Ohms	225 W	Brackets (not included)	Vitreous Enamel Coated	Pulse Withstanding	Solder Lugs
Vishay General Semiconductor - Diodes Division RBEF02252R500KFB00	Radial Tubular	Wirewound	415 °C	-55 °C	28.58 mm	1.125 "	155.58 mm	6.125 in	10 %	2.5 Ohms	225 W	Brackets (not included)	Vitreous Enamel Coated	Pulse Withstanding	Solder Lugs

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 387.84

General part information

3 Ohms ±10% 225W Wirewound Chassis Mount Resistor

Technical documentation and resources