Specification	SIRA12BDP-T1-GE3

Current - Continuous Drain (Id) (Ta)	27 A
Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1470 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 38 W
Rds On (Max)	4.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRA12 Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Technology	Power Dissipation (Max)	FET Type	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Package Name	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SIRA12DP-T1-GE3	PowerPAK® SO-8	30 V	-55 °C	150 °C	25 A 25 A	2070 pF	45 nC	10 V	4.5 V	2.2 V	MOSFET (Metal Oxide)	4.5 W 31 W	N-Channel	Surface Mount	-16 V	20 V	PowerPAK® SO-8	4.3 mOhm
Vishay Dale SIRA12BDP-T1-GE3	PowerPAK® SO-8	30 V	-55 °C	150 °C	60 A	1470 pF	32 nC	10 V	4.5 V	2.4 V	MOSFET (Metal Oxide)	5 W 38 W	N-Channel	Surface Mount	-16 V	20 V	PowerPAK® SO-8	4.3 mOhm	27 A

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