TPH2900ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.029 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
TPH2900ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.029 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Description
General part information
TPH2900ENH Series
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.029 Ω@10V, SOP Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH2900ENH,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 33 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 22 nC |
| Input Capacitance (Ciss) (Max) | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) | 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Maximum Ratings: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Avalanche energy calculation
MOSFET SPICE model grade
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
MOSFET Self-Turn-On Phenomenon
Reverse Recovery Operation and Destruction of MOSFET Body Diode
TPH2900ENH Data sheet/Japanese
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Secondary Breakdown
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
TPH2900ENH Data sheet/English
Motor Control (Vacuum Cleaners)
Resonant Circuits and Soft Switching
Electrical Characteristics: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Selection Guide MOSFETs 2025 Rev1.0