TBC857B,LM

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Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SOT23-3

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Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	TBC857B,LM

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	30 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	210
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	320 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Package / Case	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage TBC857B,LM	Surface Mount	150 °C	50 V	30 nA	650 mV	320 mW	SC-59 SOT-23-3 TO-236-3	PNP	SOT-23-3	210	150 mA

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General part information

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 320 mW Surface Mount SOT-23-3

Technical documentation and resources