RS1E180BNTB

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Rohm Semiconductor

MOSFET N-CHANNEL 30V 60A 8-HSOP

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RS1E180BNTB

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Rohm Semiconductor

MOSFET N-CHANNEL 30V 60A 8-HSOP

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Description Specifications Series Pricing CAD Documents

Description

General part information

RS1E Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Technical Specifications

Parameters and characteristics for this part

Specification	RS1E180BNTB

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	46 nC
Input Capacitance (Ciss) (Max)	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	CPT3
Power Dissipation (Max)	3 W, 25 W
Rds On (Max)	4.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

RS1E Series

Nch 30V 60A Middle Power MOSFET

Part	Operating Temperature	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Vgs(th) (Max)	Package Name	Mounting Type	Rds On (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)
Rohm Semiconductor RS1E130GNTB	150 °C	N-Channel	420 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	0.0117 Ohm	3 W 22.2 W	13 A	30 V
Rohm Semiconductor RS1E240GNTB	150 °C	N-Channel	1500 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	3.3 mOhm	3 W 27 W	24 A	30 V	72 A	23 nC
Rohm Semiconductor RS1E281BNTB1	150 °C	N-Channel	5100 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	2.3 mOhm	3 W	28 A	30 V	80 A	94 nC
Rohm Semiconductor RS1E180BNTB	150 °C	N-Channel	2400 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	CPT3	Surface Mount	4.9 mOhm	3 W 25 W		30 V	60 A	46 nC
Rohm Semiconductor RS1E350BNTB	150 °C	N-Channel	7900 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	1.7 mOhm	3 W 35 W	35 A	30 V	80 A	185 nC
Rohm Semiconductor RS1E200BNTB	150 °C	N-Channel	3100 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	3.9 mOhm	3 W 25 W	20 A	30 V	68 A	59 nC
Rohm Semiconductor RS1E321GNTB1	150 °C	N-Channel	2850 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	2.1 mOhm	3 W	32 A	30 V	80 A	42.8 nC
Rohm Semiconductor RS1E350BNTB1	150 °C	N-Channel	7900 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	1.7 mOhm	3 W 35 W	35 A	30 V	80 A	185 nC
Rohm Semiconductor RS1E240BNTB	150 °C	N-Channel	3900 pF	8-PowerTDFN	MOSFET (Metal Oxide)	10 V	4.5 V	20 V	2.5 V	8-HSOP	Surface Mount	3.2 mOhm	3 W 30 W	24 A	30 V	40 A	70 nC